NXP Semiconductors PHPT60606NY
NPN high power bipolar transistor
| Part No. | PHPT60606NY |
|---|---|
| Datasheet | PHPT60606NY Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN high power bipolar transistor |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● High thermal power dissipation capability● High temperature applications up to 175 °C
● Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
● High energy efficiency due to less heat generation
● AEC-Q101 qualified. 3.
APPLICATIONS
● Power management● Load switch
● Linear mode voltage regulator
● Backlighting applications
● Relay replacement
● Motor drive 4. Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter Conditions collector-emitter voltage open base collector current peak collector current single pulse; tp ≤ 1 ms collector-emitter saturation resistance IC = 6 A; IB = 600 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C Min Typ Max Unit - - 60 V - - 6A - - 14 A - 34 45 mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors PHPT60606NY 60 V, 6 A NPN high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol
DESCRIPTION
1 E emitter 2 E emitter 3 E emitter 4 B base mb C collector Simplified outline mb 1234 LFPAK56; PowerSO8 (SOT669) Graphic symbol C B E sym123 6.
