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PHU2N50E - PowerMOS transistors Avalanche energy rated

Description

N-channel, enhancement mode field-effect power transistor, intended for use in Compact Fluorescent Lamps (CFL) and low power ballasts.

The PHU2N50E is compatible with self oscillating and IC driven circuits, including the UBA2021 ballast controller IC.

Features

  • Repetitive Avalanche Rated.
  • Fast switching.
  • Stable off-state characteristics.
  • High thermal cycling performance.
  • Low thermal resistance.
  • Extremely high dV/dt capability PHU2N50E QUICK.

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Datasheet Details

Part number PHU2N50E
Manufacturer NXP
File Size 64.81 KB
Description PowerMOS transistors Avalanche energy rated
Datasheet download datasheet PHU2N50E Datasheet
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Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance • Extremely high dV/dt capability PHU2N50E QUICK REFERENCE DATA VDSS = 500 V ID = 2 A RDS(ON) ≤ 5 Ω GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in Compact Fluorescent Lamps (CFL) and low power ballasts. The PHU2N50E is compatible with self oscillating and IC driven circuits, including the UBA2021 ballast controller IC. Other applications include off line switched mode power supplies and D.C. to D.C. converters. The PHU2N50E is supplied in the SOT533 (I-PAK) leaded package.
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