PHU77NQ03T Datasheet | NXP Semiconductors

PHD/PHU77NQ03T N-channel Trench MOS FET Rev. 01 - 28 November 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. 1.2 Features I Fast switching I Low thermal resistance 1.3 Applications I DC-to-DC converters I puter motherboard 1.4 Quick reference data I VDS ≤ 25 V I RDSon ≤ 9.5 mΩ I ID ≤ 75 A I QGD = 3.2 n C (typ) 2. Pinning information Table 1. Pinning Pin Description 1 gate (G) 2 drain (D) 3 source (S) mb mounting base; connected to drain (D) Simplified outline [1] mb 2 13 SOT428 (DPAK) [1] It is not possible to make a connection to pin 2 of the SOT428 package. Symbol mb D SOT533 (IPAK) G mbb076 S NXP Semiconductors PHD/PHU77NQ03T N-channel Trench MOS FET 3. Ordering...