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PHW80NQ10T - N-channel TrenchMOS transistor

General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.

d.c.

to d.c.

switched mode power supplies The PHW80NQ10T is supplied in the SOT429 (TO247) conventional leaded package.

Key Features

  • ’Trench’ technology.
  • Very low on-state resistance.
  • Fast switching.
  • Low thermal resistance SYMBOL d QUICK.

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor PHW80NQ10T FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 80 A g RDS(ON) ≤ 15 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:• d.c. to d.c. converters • switched mode power supplies The PHW80NQ10T is supplied in the SOT429 (TO247) conventional leaded package.