PHW80NQ10T Description
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. converters switched mode power supplies The PHW80NQ10T is supplied in the SOT429 (TO247) conventional leaded package. RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN.
PHW80NQ10T Key Features
- Very low on-state resistance
- Fast switching
- Low thermal resistance