Datasheet4U Logo Datasheet4U.com

PHW8N50E - PowerMOS transistors Avalanche energy rated

General Description

N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V.

and computer monitor power supplies, d.c.

to d.c.

Key Features

  • Repetitive Avalanche Rated.
  • Fast switching.
  • Stable off-state characteristics.
  • High thermal cycling performance.
  • Low thermal resistance PHP8N50E, PHB8N50E, PHW8N50E SYMBOL d QUICK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PHW11N50E PowerMOS transistors Philips

Other Datasheets by NXP Semiconductors

Part Number Description
PHW8ND50E PowerMOS transistors FREDFET/ Avalanche energy rated
PHW80NQ10T N-channel TrenchMOS transistor
PHW11N50E PowerMOS transistors Avalanche energy rated
PHW11N50E PowerMOS transistors Avalanche energy rated
PHW13N40E PowerMOS transistors Avalanche energy rated

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHP8N50E, PHB8N50E, PHW8N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g ID = 8.5 A RDS(ON) ≤ 0.85 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP8N50E is supplied in the SOT78 (TO220AB) conventional leaded package. The PHW8N50E is supplied in the SOT429 (TO247) conventional leaded package.