PHX6ND50E - PowerMOS transistors FREDFET/ Avalanche energy rated

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NXP

PHX6ND50E PowerMOS transistors FREDFET/ Avalanche energy rated by NXP - Datasheet Preview — Datasheet preview – PHX6ND50E

Datasheet Details

Part number	PHX6ND50E
Manufacturer	NXP
File Size	60.73 KB
Description	PowerMOS transistors FREDFET/ Avalanche energy rated
Datasheet	PHX6ND50E Datasheet
Additional preview pages of the PHX6ND50E datasheet.

PHX6ND50E Product details

Description

N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).

This gives improved switching performance in half bridge and full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits.

Features

Repetitive Avalanche Rated.
Fast switching.
Stable off-state characteristics.
High thermal cycling performance.
Isolated package.
Fast reverse recovery diode PHX6ND50E SYMBOL d QUICK.

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Published: Mar 22, 2005 |