Datasheet Summary
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
PHX14NQ20T , PHF14NQ20T
Features
- ’Trench’ technology
- Low on-state resistance
- Fast switching
SYMBOL d
QUICK REFERENCE DATA VDSS = 200 V ID = 7.6 A g
RDS(ON) ≤ 230 mΩ s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHX14NQ20T is supplied in the SOT186A (FPAK) conventional leaded package.
PINNING
PIN 1 2 3 case gate drain source isolated DESCRIPTION
SOT186A (FPAK) case
SOT186...