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PHX18NQ20T - N-channel enhancement mode field-effect transistor

General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability: PHX18NQ20T in SOT186A.

2.

Key Features

  • s s s s s TrenchMOS™ technology Low on-state resistance Fast switching Low thermal resistance Isolated tab. 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHX18NQ20T N-channel enhancement mode field-effect transistor Rev. 01 — 28 August 2000 M3D308 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHX18NQ20T in SOT186A. 2. Features s s s s s TrenchMOS™ technology Low on-state resistance Fast switching Low thermal resistance Isolated tab. 3. Applications c c s s s s Off-line switched mode power supplies Television and computer monitor power supplies DC to DC converters Motor control circuits 4. Pinning information Table 1: Pin 1 2 3 Tab Pinning - SOT186A, simplified outline and symbol Description gate (g) isolated tab d Simplified outline Symbol drain (d) source (s) isolated 03ab49 g 123 s 03ab30 1.