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PMEG2015EV

Manufacturer: NXP Semiconductors

PMEG2015EV datasheet by NXP Semiconductors.

PMEG2015EV datasheet preview

PMEG2015EV Datasheet Details

Part number PMEG2015EV
Datasheet PMEG2015EV-NXP.pdf
File Size 61.26 KB
Manufacturer NXP Semiconductors
Description MEGA Schottky barrier diode
PMEG2015EV page 2 PMEG2015EV page 3

PMEG2015EV Overview

Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOT666 ultra small SMD plastic package. DESCRIPTION cathode cathode anode anode cathode cathode 1, 2 5, 6 3, 4 MHC310 Fig.1 Simplified outline (SOT666 and symbol). LIMITING VALUES In accordance with the Rating System (IEC 60134).

PMEG2015EV Key Features

  • Forward current: 1.5 A
  • Reverse voltage: 20 V
  • Very low forward voltage
  • Ultra small plastic SMD package
  • Flat leads: excellent coplanarity and improved thermal

PMEG2015EA from other manufacturers

View PMEG2015EA datasheet index

Brand Logo Part Number Description Other Manufacturers
Philips Logo PMEG2015EA Low VF (MEGA) Schottky barrier diode Philips
NXP Semiconductors Logo PMEG2015EH 20 V/ 1.5 A very low VF MEGA Schottky barrier rectifiers NXP Semiconductors
nexperia Logo PMEG2015EH MEGA Schottky barrier rectifiers nexperia
NXP Semiconductors Logo PMEG2015EJ 20 V/ 1.5 A very low VF MEGA Schottky barrier rectifiers NXP Semiconductors
nexperia Logo PMEG2015EJ MEGA Schottky barrier rectifiers nexperia
NXP Semiconductors logo - Manufacturer

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