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PMGD130UN
20 V, dual N-channel Trench MOSFET
Rev. 1 — 1 June 2012 Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Low threshold voltage Very fast switching Trench MOSFET technology
1.3 Applications
Relay driver High-speed line driver Low-side loadswitch Switching sircuits
1.4 Quick reference data
Table 1. Symbol Per transistor VDS VGS ID RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 1.
PMGD130UN Datasheet
