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PML260SN - N-Channel MOSFET

General Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a surface-mounted plastic package using TrenchMOS technology.

Key Features

  • I Standard level threshold I Very low thermal impedance I Low profile and small footprint I Low on-state resistance 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PML260SN N-channel TrenchMOS standard level FET Rev. 02 — 29 May 2006 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a surface-mounted plastic package using TrenchMOS technology. 1.2 Features I Standard level threshold I Very low thermal impedance I Low profile and small footprint I Low on-state resistance 1.3 Applications I Primary side switching I Portable appliances I DC-to-DC converters 1.4 Quick reference data I VDS ≤ 200 V I RDSon ≤ 294 mΩ I ID ≤ 8.8 A I QGD = 4.2 nC (typ) 2. Pinning information Table 1.