PMN35EN Datasheet | NXP Semiconductors

SO T4 57 30 V, 5.1 A N-channel Trench MOSFET Rev. 1 - 20 July 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits - Logic-level patible - Very fast switching - Trench MOSFET technology 1.3 Applications - Relay driver - High-speed line driver - Low-side load switch - Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 5.1 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -20 - Typ 25 Max 30 20 5.1 31 Unit V V A mΩ Static characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description D D G S D D drain drain gate source drain drain 1 2 3...