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PMN35EN - MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

  • Logic-level compatible.
  • Very fast switching.
  • Trench MOSFET technology 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SO T4 57 PMN35EN 30 V, 5.1 A N-channel Trench MOSFET Rev. 1 — 20 July 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology 1.3 Applications  Relay driver  High-speed line driver  Low-side load switch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 5.1 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -20 - Typ 25 Max 30 20 5.