Datasheet4U Logo Datasheet4U.com

PMN30UN - N-channel MOSFET

Datasheet Summary

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Trench MOSFET technology.
  • Low threshold voltage.
  • Very fast switching.
  • Enhanced power dissipation capability of 1240 mW 3.

📥 Download Datasheet

Datasheet preview – PMN30UN

Datasheet Details

Part number PMN30UN
Manufacturer nexperia
File Size 741.79 KB
Description N-channel MOSFET
Datasheet download datasheet PMN30UN Datasheet
Additional preview pages of the PMN30UN datasheet.

📁 Similar Datasheet

  • PMN34LN - logic level FET (NXP Semiconductors)
  • PMN34UN - MOSFET (Philips)
  • PMN34UP - MOSFET (NXP Semiconductors)
  • PMN35EN - MOSFET (NXP)
  • PMN38EN - N-channel TrenchMOS logic level FET (NXP)
  • PMN20EN - 6.7A N-channel Trench MOSFET (NXP Semiconductors)
  • PMN22XN - single N-channel Trench MOSFET (NXP Semiconductors)
  • PMN23UN - UTrenchMOS ultra low level FET (NXP Semiconductors)
  • PMN25EN - 6.2A N-channel Trench MOSFET (NXP Semiconductors)
  • PMN25UN - 6A N-channel Trench MOSFET (NXP Semiconductors)
Other Datasheets by nexperia

Full PDF Text Transcription

Click to expand full text
PMN30UN 30 V, N-channel Trench MOSFET 29 January 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • Enhanced power dissipation capability of 1240 mW 3. Applications • LED driver • Power management • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 4.
Published: |