PMN30XP
PMN30XP is P-channel MOSFET manufactured by Nexperia.
description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Trench MOSFET technology
- Low threshold voltage
- Enhanced power dissipation capability of 1400 m W
3. Applications
- Relay driver
- High-speed line driver
- High-side loadswitch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-12
- 12 V
ID drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1]
- - -6.8 A
Static characteristics
RDSon drain-source on-state VGS = -4.5 V; ID = -5.2 A; Tj = 25 °C resistance
- 30 34 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
20 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description
1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain
Simplified outline
TSOP6 (SOT457)
Graphic...
