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DF N
PMPB40SNA
2 July 2013
20 20
MD -6
60 V N-channel Trench MOSFET
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• • • • •
Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection AEC-Q101 qualified
3. Applications
• • • •
Relay driver High-speed line driver Low-side load switch Switching circuits
4. Quick reference data
Table 1.
PMPB40SNA Datasheet
