PMPB40SNA Datasheet | NXP Semiconductors

DF N 2 July 2013 20 20 MD -6 60 V N-channel Trench MOSFET Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits - - - - - Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection AEC-Q101 qualified 3. Applications - - - - Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tsp = 25 °C VGS = 10 V; ID = 4.8 A; Tj = 25 °C Conditions Tj = 25 °C Min -20 Typ Max 60 20 12.9 Unit V V A Static characteristics drain-source on-state resistance 34 43 mΩ Scan or click this QR code to view the latest information for this product NXP Semiconductors 60 V N-channel Trench MOSFET 5. Pinning information Table 2. Pin 1 2 3 4 5 6 7 8 Pinning information Symbol Description D D G S D D D S drain drain gate source drain drain drain source Simplified outline 1 2 3 7 6 5 4 017aaa253 Graphic symbol Transparent top view DFN2020MD-6 (SOT1220) 6. Ordering...