Datasheet4U Logo Datasheet4U.com

PMPB43XPE - P-Channel MOSFET

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • 1 kV ESD protected.
  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm.
  • Exposed drain pad for excellent thermal conduction.
  • Tin-plated 100 % solderable side pads for optical solder inspection 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMPB43XPE P-channel MOSFET nexperia
PMPB43XPEA P-channel MOSFET nexperia
PMPB47XP P-channel MOSFET nexperia
PMPB48EP P-channel MOSFET nexperia
PMPB48EPA P-channel MOSFET nexperia

Other Datasheets by NXP Semiconductors

Part Number Description
PMPB40SNA 60V N-channel Trench MOSFET
PMPB47XP single P-channel Trench MOSFET
PMPB48EP single P-channel Trench MOSFET
PMPB10XNE single N-channel Trench MOSFET
PMPB11EN 30V N-channel Trench MOSFET

Full PDF Text Transcription

Click to expand full text
DFN2020MD-6 PMPB43XPE 20 V, single P-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • 1 kV ESD protected • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderable side pads for optical solder inspection 3. Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portable devices • Hard disk and computing power management 4. Quick reference data Table 1.
Published: |