PMPB43XPE Datasheet and Specifications PDF

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and .

and benefits
* 1 kV ESD protected
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
* Exposed drain pad for excellent thermal conduction
* Tin-plated 100 % solderable side pads for optical solder inspection 3. Applications
* Charging switch for portable devices
* DC-to-DC convert.

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and .

and benefits
* 1 kV ESD protected
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
* Exposed drain pad for excellent thermal conduction
* Tin-plated 100 % solderable side pads for optical solder inspection 3. Applications
* Charging switch for portable devices
* DC-to-DC convert.