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PMT760EN
25 October 2012
100 V N-channel Trench MOSFET
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology 1.3 Applications • Relay driver • LED backlight driver • Low-side loadswitch • Switching circuits
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1.4 Quick reference data
Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; ID = 0.8 A; Tj = 25 °C
[1]
Conditions Tj = 25 °C
Min -20 -
Typ -
Max 100 20 1.