Datasheet4U Logo Datasheet4U.com

PMZ550UNE - N-channel Trench MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Trench MOSFET technology.
  • Low threshold voltage.
  • Very fast switching.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM.
  • Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm 3.

📥 Download Datasheet

Datasheet preview – PMZ550UNE

Datasheet Details

Part number PMZ550UNE
Manufacturer NXP
File Size 215.36 KB
Description N-channel Trench MOSFET
Datasheet download datasheet PMZ550UNE Datasheet
Additional preview pages of the PMZ550UNE datasheet.

📁 Similar Datasheet

  • PMZ550UNE - N-channel MOSFET (nexperia)
  • PMZ1000UN - N-channel TrenchMOS standard level FET (NXP Semiconductors)
  • PMZ1200UPE - P-channel MOSFET (nexperia)
  • PMZ130UNE - N-channel MOSFET (nexperia)
  • PMZ200UNE - N-channel MOSFET (nexperia)
  • PMZ250UN - N-channel TrenchMOS extremely low level FET (NXP Semiconductors)
  • PMZ270XN - N-channel TrenchMOS extremely low level FET (NXP Semiconductors)
  • PMZ290UNE - N-channel MOSFET (nexperia)
  • PMZ290UNE2 - N-channel MOSFET (nexperia)
  • PMZ320UPE - P-channel MOSFET (nexperia)
Other Datasheets by NXP

Full PDF Text Transcription

Click to expand full text
SOT883 PMZ550UNE 30 V, N-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1.
Published: |