Datasheet4U Logo Datasheet4U.com

PMZ550UNE - N-channel MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Trench MOSFET technology.
  • Low threshold voltage.
  • Very fast switching.
  • ElectroStatic Discharge (ESD) protection > 2 kV HBM.
  • Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm 3.

📥 Download Datasheet

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
NXP Logo PMZ550UNE N-channel Trench MOSFET NXP

More Datasheets from Nexperia

Part Number Description
PMZ1200UPE P-channel MOSFET
PMZ130UNE N-channel MOSFET
PMZ200UNE N-channel MOSFET
PMZ290UNE N-channel MOSFET
PMZ290UNE2 N-channel MOSFET
PMZ320UPE P-channel MOSFET
PMZ350UPE P-channel MOSFET
PMZ390UNE N-channel MOSFET
PMZ600UNE N-channel MOSFET
PMZ600UNEL N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMZ550UNE 30 V, N-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Leadless ultra small SMD plastic package: 1.0 x 0.6 x 0.48 mm 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1.