Datasheet4U Logo Datasheet4U.com

PSMN1R3-30YL - N-channel 30 V 1.3 MOhm Logic Level MOSFET

General Description

Logic level N-channel MOSFET in LFPAK package qualified to 150 °C.

This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Key Features

  • Advanced TrenchMOS provides low RDSon and low gate charge.
  • High efficiency gains in switching power convertors.
  • Improved mechanical and thermal characteristics.
  • LFPAK provides maximum power density in a Power SO8 package 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PSMN1R3-30YL N-channel MOSFET nexperia
PSMN1R3-100ASF N-channel MOSFET nexperia
PSMN1R3-80SSF N-channel MOSFET nexperia
PSMN1R0-100ASE N-channel MOSFET nexperia
PSMN1R0-100CSF N-channel MOSFET nexperia

Other Datasheets by NXP Semiconductors

Part Number Description
PSMN1R0-30YLD N-channel MOSFET
PSMN1R0-40YLD N-channel MOSFET
PSMN1R1-30PL MOSFET
PSMN1R1-40BS MOSFET
PSMN1R2-25YL N-channel 25 V 1.2 MOhm Logic Level MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PSMN1R3-30YL www.DataSheet4U.com N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK Rev. 02 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits „ Advanced TrenchMOS provides low RDSon and low gate charge „ High efficiency gains in switching power convertors „ Improved mechanical and thermal characteristics „ LFPAK provides maximum power density in a Power SO8 package 1.3 Applications „ DC-to-DC converters „ Lithium-ion battery protection „ Load switching „ Motor control „ Server power supplies 1.4 Quick reference data Table 1.