PSMN1R3-30YL Key Features
- Advanced TrenchMOS provides low RDSon and low gate charge
- High efficiency gains in switching power convertors
- Improved mechanical and thermal characteristics
- LFPAK provides maximum power density in a Power SO8 package
| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
PSMN1R3-30YL | N-channel 30 V 1.3 MOhm Logic Level MOSFET |