PSMN1R5-25YL Datasheet | NXP Semiconductors

.. N-channel Trench MOS logic level FET Rev. 01 - 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in industrial and munications applications. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for logic level gate drive sources 1.3 Applications - Class-D amplifiers - DC-to-DC converters - Motor control - Server power supplies 1.4 Quick reference data Table 1. VDS ID Ptot Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1; Tmb = 25 °C; see Figure 2 [1] Min Typ Max 25 100 109 Unit V A W drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C drain current total power dissipation gate-drain charge Symbol Parameter Dynamic characteristics QGD VGS = 4.5 V; ID = 10 A; VDS = 12 V; see Figure 14; see Figure 15 VGS = 4.5 V; ID = 10 A; VDS = 12 V; see Figure 14; see Figure 15 VGS = 10 V; ID = 15 A; Tj = 25 °C 9.2 n C QG(tot) total gate charge - 36 - n C Static characteristics RDSon drain-source on-state resistance 1.13 1.5 mΩ [1] Continuous current is limited by package. NXP Semiconductors w w w . D a t a S h e e t 4 U . c o m N-channel Trench MOS logic level FET 2. Pinning information Table 2. Pin 1 2 3 4 mb S S S G D Pinning information Symbol Description source source source gate mounting base; connected to drain mbb076 Simplified outline mb Graphic...