PSMN1R5-25YL Datasheet | Nexperia

N-channel Trench MOS logic level FET Rev. 01 - 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in industrial and munications applications. 1.2 Features and benefits - High efficiency due to low switching and conduction losses - Suitable for logic level gate drive sources 1.3 Applications - Class-D amplifiers - DC-to-DC converters - Motor control - Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - - 25 V ID drain current Tmb = 25 °C; VGS = 10 V; [1] - - 100 A see Figure 1; Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 109 W Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 10...