Datasheet4U Logo Datasheet4U.com

PSMN1R5-25YL - N-channel MOSFET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in industrial and communications applications.

Key Features

  • High efficiency due to low switching and conduction losses.
  • Suitable for logic level gate drive sources 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PSMN1R5-25YL N-channel FET NXP
PSMN1R5-30BLE N-channel MOSFET NXP
PSMN1R5-30YL N-channel MOSFET NXP Semiconductors
PSMN1R5-40ES MOSFET NXP
PSMN1R5-40PS MOSFET NXP

Other Datasheets by Nexperia

Part Number Description
PSMN1R5-30BLE N-channel MOSFET
PSMN1R5-30YL N-channel MOSFET
PSMN1R5-30YLC N-channel MOSFET
PSMN1R5-40PS N-channel MOSFET
PSMN1R5-40YSD N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PSMN1R5-25YL N-channel TrenchMOS logic level FET Rev. 01 — 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ Class-D amplifiers „ DC-to-DC converters „ Motor control „ Server power supplies 1.4 Quick reference data Table 1.