PSMN1R5-40PS
PSMN1R5-40PS is MOSFET manufactured by NXP Semiconductors.
15 July 2013
TO -2
20A
N-channel 40 V 1.6 mΩ standard level MOSFET in TO220
Product data sheet
1. General description
Standard level N-channel MOSFET in SOT78 (TO220) using Trench MOS technology. Product design and manufacture has been optimized for use in battery operated power tools.
2. Features and benefits
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- High efficiency due to low switching and conduction losses Robust construction for demanding applications Standard level gate
3. Applications
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Battery-powered tools Load switching Motor control Uninterruptible power supplies
4. Quick reference data
Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 13 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig. 14 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 75 A; VDS = 20 V; Tj = 25 °C; Fig. 15; Fig. 16 32 136 n C n C
[2] [1]
Min
- Typ
- Max 40 150 338
Unit V A W
Static characteristics drain-source on-state resistance 1.9 1.3 2.3 1.6 mΩ mΩ
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NXP Semiconductors
N-channel 40 V 1.6 mΩ standard level MOSFET in TO220
Symbol EDS(AL)S
Parameter non-repetitive drainsource avalanche energy
[1] [2]
Conditions VGS = 10 V; Tj(init) = 25 °C; ID = 150 A; Vsup ≤ 40 V; unclamped; RGS = 50 Ω; tp = 0.1 ms; Fig....
