PSMN1R5-40YSD Description
240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
PSMN1R5-40YSD Key Features
- 240 A continuous ID(max) rating
- Avalanche rated, 100% tested at IAS = 190 A
- Strong SOA (linear-mode) rating
- NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
- Low QRR, QG and QGD for high system efficiency and low EMI designs
- Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage
- Exposed leads can be wave soldered, visual solder joint inspection and high quality solder
- Low parasitic inductance and resistance