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PSMN1R5-40YSD - N-channel MOSFET

Datasheet Summary

Description

240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology.

This product has been designed and qualified for high performance power switching applications.

2.

Features

  • 240 A continuous ID(max) rating.
  • Avalanche rated, 100% tested at IAS = 190 A.
  • Strong SOA (linear-mode) rating.
  • NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'.
  • Low QRR, QG and QGD for high system efficiency and low EMI designs.
  • Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage.
  • High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qua.

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Datasheet Details

Part number PSMN1R5-40YSD
Manufacturer nexperia
File Size 299.89 KB
Description N-channel MOSFET
Datasheet download datasheet PSMN1R5-40YSD Datasheet
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PSMN1R5-40YSD N-channel 40 V, 1.5 mΩ, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 27 August 2019 Product data sheet 1. General description 240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications. 2.
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