PSMN1R5-40YSD
PSMN1R5-40YSD is N-channel MOSFET manufactured by Nexperia.
N-channel 40 V, 1.5 mΩ, 240 A standard level MOSFET in
LFPAK56 using Next Power-S3 Schottky-Plus technology
27 August 2019
Product data sheet
1. General description
240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced Trench MOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
2. Features and benefits
- 240 A continuous ID(max) rating
- Avalanche rated, 100% tested at IAS = 190 A
- Strong SOA (linear-mode) rating
- Next Power-S3 technology delivers 'superfast switching with soft body-diode recovery'
- Low QRR, QG and QGD for high system efficiency and low EMI designs
- Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage
- High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to
175 °C
- Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints
- Low parasitic inductance and resistance
3. Applications
- High-performance synchronous rectification
- DC-to-DC converters
- High performance and high efficiency server power supply
- Brushless DC motor control
- Battery protection
- Load-switch and e Fuse
- Inrush management, hotswap
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source...
