Download PTB23001X Datasheet PDF
NXP Semiconductors
PTB23001X

Key Features

  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
  • Interdigitated structure provides high emitter efficiency
  • Multicell geometry gives good balance of dissipated power and low olumns
  • Tmb = 75 °C; f > 1 MHz
  • handbook, halfpage