PTB23001X Description
NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange. QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a mon-base class B circuit. The product is entirely safe provided that the BeO slab is not damaged.
PTB23001X Key Features
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Interdigitated structure provides high emitter efficiency
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and e
PTB23001X Applications
- SOT440A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION