Description
NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.
Features
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
- Interdigitated structure provides high emitter efficiency.
- Multicell geometry gives good balance of dissipated power and low thermal resistance.
- Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability.
PTB23001X Datasheet
