PTB23003X
Description
Top view 2 NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange
Key Features
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Interdigitated structure provides high emitter efficiency
- Multicell geometry gives good balance of dissipated power and low 3
- UNIT V V µA µA pF pF
Applications
- Circuit consists of prematching circuit board in bination with plementary input and output slug tuners
