NXP Semiconductors PZTM1101
NPN transistor/Schottky-diode module
| Part No. | PZTM1101 |
|---|---|
| Datasheet | PZTM1101 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN transistor/Schottky-diode module |
| Buy | Stock & Price |
FEATURES
● Low output capacitance● Fast switching time
● Integrated Schottky protection diode. handbook, halfpage PZTM1101
DESCRIPTION
Combination of an NPN transistor and a Schottky barrier diode in a plastic SOT223 package. PNP complement: PZTM1102. 4 1APPLICATIONS
● High-speed switching for industrial applications. 2 4 PINNING PIN 1 2 3 4 base emitter collector, cathode SchottkyDESCRIPTION
anode Schottky Marking code: TM1101. 1 Top view 2 3 MAM236 3 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL NPN transistor VCBO VCES VEBO IC VR IF IF(AV) Tj collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) open emitter VBE = 0 open collector − − − − − − − reverse current applied forward current applied Combined device Ptot Tamb Tstg Tj total power dissipation operating ambient temperature storage temperature junction temperature up to Tamb = 25 °C − −55 −55 − 1.2 +150 +150 150 W °C °C °C − − 60 40 6 200 V V V mA PARAMETER CONDITIONS MIN.
