NXP Semiconductors PZTM1102
PNP transistor/Schottky-diode module
| Part No. | PZTM1102 |
|---|---|
| Datasheet | PZTM1102 Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP transistor/Schottky-diode module |
| Buy | Stock & Price |
FEATURES
● Low output capacitance● Fast switching time
● Integrated Schottky protection diode. handbook, halfpage PZTM1102
DESCRIPTION
Combination of a PNP transistor and a Schottky barrier diode in a plastic SOT223 package. NPN complement: PZTM1101. 4 1APPLICATIONS
● High-speed switching for industrial applications. 2 4 PINNING PIN 1 2 3 4 base emitter collector, anode SchottkyDESCRIPTION
cathode Schottky Marking code: TM1102. 1 Top view 2 3 MAM237 3 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PNP transistor VCBO VCES VEBO IC VR IF IF(AV) P Tj collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) open emitter VBE = 0 open collector − − − − − − − up to Tamb = 25 °C; note 1 reverse current applied forward current applied Combined device Ptot Tamb Tstg Tj Notes 1. An additional copper area of >20 mm2 is required for pin 1, if power dissipation in the Schottky die is >0.5 W.
