2N7002BKMB Description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2N7002BKMB Key Features
- Very fast switching
- Trench MOSFET technology
- ESD protection up to 2 kV
- Logic-level patible
- Ultra thin package profile with 0.37 mm height