BFU725F Description
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices.
BFU725F Key Features
- Low noise high gain microwave transistor
- Noise figure (NF) = 0.7 dB at 5.8 GHz
- High maximum stable gain 27 dB at 1.8 GHz
- 110 GHz fT silicon germanium technology