BLL1214-250R Description
Silicon N-channel enhancement model LDMOS power transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The mon source is connected to the flange. Test information Typical RF performance at Th = 25 °C;.
BLL1214-250R Key Features
- High power gain
- Easy power control
- Excellent ruggedness
- Source on mounting base eliminates DC isolators, reducing mon mode inductance