BUK9006-55A Description
N-channel enhancement mode field-effect power transistor available as a bare die using Philips General Purpose Automotive (GPA) TrenchMOS™ technology. BUK9006-55A distributed as individual die on reel.
- Part: BUK9006-55A
- Manufacturer: NXP Semiconductors (official site)
- Size: 250.39 KB
Related NXP Semiconductors Datasheets
| Part Number | Description |
|---|---|
| BUK9207-30B | N-Channel MOSFET |
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| BUK9212-55B | TrenchMOS logic level FET |
| BUK9213-30A | TrenchMOS logic level FET |
| BUK9214-75B | TrenchMOS logic level FET |