PMDPB95XNE Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
PMDPB95XNE Key Features
- Very fast switching
- Trench MOSFET technology
- Leadless medium power SMD plastic package: 2 × 2 × 0.6 mm
- Exposed drain pad for excellent thermal conduction
- ESD protection up to 1.8 kV 1.3
PMDPB95XNE Applications
- Charging switch for portable devices
- DC-to-DC converters