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Naina Semiconductor Ltd.
Schottky Power Diode, 40A
Features
• • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity
1N5832 thru 1N5834R
DO-203AB (DO-5)
Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage Reverse current TC ≤ 100 C TC = 25oC IF = 40 A TJ = 25oC VR = 10V, TJ = 25oC VR = 10V, TJ = 125oC
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Test Conditions
Symbol VRRM VRMS VDC IF IFSM
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1N5832(R) 20 14 20 40 800 0.52 20 250
1N5833(R) 30 21 30 40 800 0.55 20 250
1N5834(R) 40 28 40 40 800 0.
1N5832 Datasheet
