Datasheet4U Logo Datasheet4U.com

1N5832 - Silicon Power Schottky Diode

Key Features

  • High Surge Capability.
  • Types from 20 V to 40V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5832 thru 1N5834R VRRM = 20 V - 40 V IF(AV) = 40 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5832 (R) 1N5833 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating t.

📥 Download Datasheet

Datasheet Details

Part number 1N5832
Manufacturer GeneSiC
File Size 326.17 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet 1N5832 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.