1N5832R Datasheet | Naina Semiconductor

Features - - - - - Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity 1N5832 thru 1N5834R DO-203AB (DO-5) Maximum Ratings (TJ = 25o C, unless otherwise noted) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage Reverse current TC ≤ 100 C TC = 25o C IF = 40 A TJ = 25o C VR = 10V, TJ = 25o C VR = 10V, TJ = 125o C o Test Conditions Symbol VRRM VRMS VDC IF IFSM http://..net/ 1N5832(R) 20 14 20 40 800 0.52 20 250 1N5833(R) 30 21 30 40 800 0.55 20 250 1N5834(R) 40 28 40 40 800 0.58 20 250 Units V V V A A V m A VF IR Thermal & Mechanical Specifications (TJ = 25o C, unless otherwise noted) Parameters Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non-lubricated threads) Approximate allowable weight Symbol Rth(JC) TJ Tstg F W 1N5832(R) 1N5833(R) 1.5 -65 to 150 -65 to 175 4.0 17.0 1N5834(R) Units o C/W o C o C Nm g D-95, Sector 63, Noida - 201301, India - Tel: 0120-4205450 - Fax: 0120-4273653 sales@nainasemi. - .nainasemi. datasheet pdf - http://..net/ Naina Semiconductor Ltd. Package Outline 1N5832 thru 1N5834R http://..net/ ALL DIMENSIONS IN MM D-95, Sector 63, Noida - 201301, India - Tel: 0120-4205450 - Fax: 0120-4273653 sales@nainasemi. - .nainasemi. datasheet pdf -...