Naina Semiconductor MBR6045
Schottky Power Diode
FEATURES
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● Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity MBR6045 thru MBR60100R DO-203AB (DO-5)
MAXIMUM RATINGS
(TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol MBR6045(R) MBR6060(R) MBR6080(R) MBR60100(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage TC ≤ 100 C TC = 25oC IF = 60 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC o VRRM VRMS VDC IF IFSM VF 45 32 45 60 700 60 42 60 60 700 0.75 5 150 80 57 80 60 700 0.84 5 150 100 70 100 60 700 0.84 5 V V V A A V 0.65 5 Reverse current IR 150 150 mA Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted) Parameters Symbol MBR6045(R) MBR6060(R) MBR6080(R) MBR60100(R) Unit o Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non...