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N02L1618C1A Datasheet Ultra-low Power Asynchronous CMOS Sram

Manufacturer: NanoAmp Solutions

Overview: NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02L1618C1A Advancewww.DataSheet4U.com Information 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview The N02L1618C1A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The base design is the same as NanoAmp’s N02L163WN1A, which is processed to operate at higher voltages. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N02L1618C1A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 128Kb x 16 SRAMs.

Datasheet Details

Part number N02L1618C1A
Manufacturer NanoAmp Solutions
File Size 293.64 KB
Description Ultra-Low Power Asynchronous CMOS SRAM
Datasheet N02L1618C1A_NanoAmpSolutions.pdf

Key Features

  • Single Wide Power Supply Range 1.65 to 2.2 Volts.
  • Very low standby current 0.5µA at 1.8V (Typical).
  • Very low operating current 1.4mA at 1.8V and 1µs (Typical).
  • Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical).
  • Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.2V.
  • Very fast output enable access time.

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