N08L1618C2A Description
Suite 220, Milpitas, CA 95035 ph: N08L1618C2A Advance Information .. 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit Overview The N08L1618C2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits.
N08L1618C2A Key Features
- Single Wide Power Supply Range 1.65 to 2.2 Volts
- Very low standby current 0.5µA at 1.8V (Typical)
- Very low operating current 1.0mA at 1.8V and 1µs (Typical)
- Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical)
- Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for
- Low voltage data retention Vcc = 1.2V
- Very fast output enable access time 25ns OE access time
- Very fast Page Mode access time tAAP = 25ns
- Automatic power down to standby mode
- TTL patible three-state output driver
N08L1618C2A Applications
- Single Wide Power Supply Range 1.65 to 2.2 Volts