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N08L163WC1C - 8Mb Ultra-Low Power Asynchronous CMOS SRAM

General Description

Stock No.

Key Features

  • Single Wide Power Supply Range 2.2 to 3.6 Volts.
  • Very low standby current 2.0µA at 3.0V (Typical).
  • Very low operating current 1.5mA at 3.0V and 1µs(Typical).
  • Simple memory control Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.5V.
  • Very fast output enable access time 25ns OE access time.
  • Automatic power down to standby mode.
  • TTL compatible three-state o.

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Datasheet Details

Part number N08L163WC1C
Manufacturer NanoAmp Solutions
File Size 250.09 KB
Description 8Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet download datasheet N08L163WC1C Datasheet

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Full PDF Text Transcription (Reference)

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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L163WC1C Advance Information www.DataSheet4U.com 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit Overview The N08L163WC1C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N08L163WC1C is optimal for various applications where low-power is critical such as battery backup and hand-held devices.