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N32T1630C1E - 32Mb Ultra-Low Power Asynchronous CMOS PSRAM

Datasheet Summary

Description

Pin Name A0-A20 WE CE ZZ OE LB UB I/O0-I/O15 VCC VSS VCCQ VSSQ Pin Function Address Inputs Write Enable Input Chip Enable Input Deep Sleep Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Power I/O only Ground I/O only VSSQ I/O11 VCCQ I/O12

Features

  • Dual voltage for Optimum Performance: Vccq - 2.7V to 3.3V Vcc - 2.7V to 3.3V.
  • Fast Cycle Times TACC < 60 nS TACC < 70 nS.
  • Very low standby current ISB < 120µA.
  • Very low operating current Icc < 25mA.
  • Dual rail operation VCCQ and VSSQ for separate I/O power rail.
  • Compact Space Saving BGA Package Product Family Part Number Package Type Operating Temperature Power Supply 2.7V - 3.3V(VCC) Speed Standby Operating Current (ISB), Current (Icc), Max.

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Datasheet Details

Part number N32T1630C1E
Manufacturer NanoAmp Solutions
File Size 352.46 KB
Description 32Mb Ultra-Low Power Asynchronous CMOS PSRAM
Datasheet download datasheet N32T1630C1E Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N32T1630C1E 32Mb Ultra-Low Power Asynchronous CMOS PSRAM 2M x 16 bit Overview The N32T1630C1E is an integrated memory device containing a 32 Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2,097,152 words by 16 bits. It is designed to be identical in operation and interface to standard 6T SRAMS. The device is designed for low standby and operating current and includes a power-down feature to automatically enter standby mode. Also included are several other power saving modes: a deep sleep mode where data is not retained in the array and partial array refresh mode where data is retained in a portion of the array.
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