N32T1630C1C Description
Suite 220, Milpitas, CA 95035 ph: The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. It is designed to be identical in operation and interface to standard 6T SRAMS.
N32T1630C1C Key Features
- Dual voltage for Optimum Performance: VccQ
- 2.7 to 3.6 Volts Vcc
- 2.7 to 3.6 Volts (Vcc ≤ VccQ)
- Fast random access time 70ns at 2.7V
- Very fast page mode access time 25ns page cycle and access
- Very low standby current 80µA V (Typical)
- Very low operating current 1.0mA at 1µs (Typical)
- Simple memory control Byte control for independent byte operation Output Enable (OE) for memory expansion
- Automatic power down to standby mode
- PAR and RMS power saving modes
N32T1630C1C Applications
- Dual voltage for Optimum Performance: VccQ
- 2.7 to 3.6 Volts Vcc
- 2.7 to 3.6 Volts (Vcc ≤ VccQ)