Description
1
Si4606
N-Channel Electrical Characteristics at Ta=250C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse
Features
- Low On resistance.
- +4.5V drive.
- RoHS compliant. Si460N6+P Complementary Enhancement MOSFET
Si4606
Package Dimensions
Specifications
Absolute Maximum Ratings at Ta=250C
Parameter
Symbol
Conditions
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature
VDSS VGSS
ID IDP PD PT Tch Tstg
PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mo.
Si4606 Datasheet
