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Si4606

Si4606 is N+P Complementary Enhancement MOSFET manufactured by Nanxin.
Si4606 datasheet preview

Si4606 Details

Part number Si4606
Datasheet Si4606 Datasheet PDF (Download)
File Size 465.83 KB
Manufacturer Nanxin
Description N+P Complementary Enhancement MOSFET
Si4606 page 2 Si4606 page 3

Si4606 Overview

1 Si4606 N-Channel at Ta=250C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay.

Si4606 Key Features

  • Low On resistance. -+4.5V drive. -RoHS pliant

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