Datasheet Details
| Part number | Si4606 |
|---|---|
| Manufacturer | Nanxin |
| File Size | 465.83 KB |
| Description | N+P Complementary Enhancement MOSFET |
| Datasheet |
 Si4606 Datasheet
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General Description
1
Si4606
N-Channel Electrical Characteristics at Ta=250C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate Threshold Voltage
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse
Key Features
- Low On resistance.
- +4.5V drive.
- RoHS compliant. Si460N6+P Complementary Enhancement MOSFET Si4606 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD PT Tch Tstg PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mo.