NT5DS16M16BF - (NT5DSxxMxBx) 256Mb DDR SDRAM

This page provides the datasheet information for the NT5DS16M16BF, a member of the NT5DS16M16BS (NT5DSxxMxBx) 256Mb DDR SDRAM family.

Product Overview

Nanya Techology

Part number	NT5DS16M16BF
Manufacturer	Nanya Techology
File Size	1.36 MB
Description	(NT5DSxxMxBx) 256Mb DDR SDRAM
Datasheet	NT5DS16M16BF Datasheet
Additional preview pages of the NT5DS16M16BF datasheet.

The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits.

It is internally configured as a quad-bank DRAM.

tion may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access.

CAS Latency and Frequency CAS Latency 3 2.5 Maximum Operating Frequency (MHz) DDR400B (-5T) 200 166.
Double data rate architecture: two data transfers per clock cycle.
Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver.
DQS is edge-aligned with data for reads and is centerali.

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Published: Sep 24, 2006 |