NT5DS16M16BG Description
The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. tion may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access.
NT5DS16M16BG Key Features
- Double data rate architecture: two data transfers per clock cycle
- Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver
- DQS is edge-aligned with data for reads and is centeraligned with data for writes
- Differential clock inputs (CK and CK)