NT5DS32M16CS - 512Mb DDR SDRAM

Product Overview

Nanya Techology

Part number	NT5DS32M16CS
Manufacturer	Nanya Techology
File Size	2.15 MB
Description	512Mb DDR SDRAM
Datasheet	NT5DS32M16CS Datasheet
Note	This datasheet PDF includes multiple part numbers: NT5DS32M16CS, NT5DS32M16CG. Please refer to the document for exact specifications by model.
Additional preview pages of the NT5DS32M16CS datasheet.

Die C of 512Mb SDRAM devices based using DDR interface.

They are all based on Nanya’s 90 nm design process.

The 512Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits.

DDR 512M bit, Die C, based on 90nm design rules.
Double data rate architecture: two data transfers per clock cycle.
Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver.
DQS is edge-aligned with data for reads and is centeraligned with data for writes.
Differential clock inputs (CK and CK).
Four internal banks for concurrent operation.
Data mask (DM) for write data.

📁 Similar Datasheet

NT5DS32M4AW - (NT5DSxxMxAx) 128Mb DDR333/300 SDRAM (Nanya Technology)
NT5DS32M8AT - 256Mb DDR333/300 SDRAM (Nanya)
NT5DS32M8AW - (NT5DSxxMxAx) 256Mb DDR333/300 SDRAM (Nanya)
NT5DS32M8ES - Commercial and Industrial Consumer DDR 256Mb SDRAM (Nanya)
NT5DS16M16ES - Commercial and Industrial Consumer DDR 256Mb SDRAM (Nanya)
NT5DS16M8AW - (NT5DSxxMxAx) 128Mb DDR333/300 SDRAM (Nanya Technology)
NT5DS4M32EG - 1M X 32 Bits X 4 Banks Double Data Rate Synchronous RAM (NanoAmp Solutions)
NT5DS64M4AT - (NT5DSxxMxAx) 256Mb DDR333/300 SDRAM (Nanya)

Other Datasheets by Nanya Techology

Published: Jul 6, 2016 |