NT5DS32M16CS
Features
- DDR 512M bit, Die C, based on 90nm design rules
- Double data rate architecture: two data transfers per clock cycle
- Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver
- DQS is edge-aligned with data for reads and is centeraligned with data for writes
- Differential clock inputs (CK and CK)
- Four internal banks for concurrent operation
- Data mask (DM) for write data
- DLL aligns DQ and DQS transitions with CK transitions
- mands entered on each positive CK edge; data and data mask referenced to both edges of DQS
- Burst lengths: 2, 4, or 8
- CAS Latency: 2.5, 3
- Auto Precharge option for each burst access
- Auto Refresh and Self Refresh Modes
- 7.8µs Maximum Average Periodic Refresh Interval
- 2.5V (SSTL_2 patible) I/O
- VDD = VDDQ = 2.6V ± 0.1V (DDR400)
- VDD = VDDQ = 2.5V ± 0.2V (DDR333)
- Ro HS pliance
Description
Die C of 512Mb SDRAM devices based using DDR interface. They are all based on Nanya’s 90...
