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NT5CB256M16BP - 4Gb DDR3 SDRAM B-Die

Download the NT5CB256M16BP datasheet PDF. This datasheet also covers the NT5CB variant, as both devices belong to the same 4gb ddr3 sdram b-die family and are provided as variant models within a single manufacturer datasheet.

General Description

The 4Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 4,294,967,296 bits.

It is internally configured as an octal-bank DRAM.

The 4Gb chip is organized as 128Mbit x 4 I/O x 8 bank , 64Mbit x 8 I/O x 8 banks and 32Mbit x16 I/O x 8 banks.

Key Features

  • and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and  falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V and 1.35V -0.0675V/+0.1V power supply and are available in BGA packages. 2 REV 1.0 01/ 2012 Free Datasheet http://www.0PDF. com 4Gb DDR.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NT5CB-1024M.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NT5CB256M16BP
Manufacturer Nanya
File Size 2.64 MB
Description 4Gb DDR3 SDRAM B-Die
Datasheet download datasheet NT5CB256M16BP Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
4Gb DDR3 SDRAM B-Die NT5CB1024M4BN / NT5CB512M8BN / NT5CB256M16BP NT5CC1024M4BN / NT5CC512M8BN / NT5CC256M16BP Feature  VDD = VDDQ = 1.5V ± 0.075V (JEDEC Standard Power Supply)  VDD = VDDQ = 1.35V -0.0675V/+0.1V (Backward Compatible to VDD = VDDQ = 1.5V ±0.