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NT5CB256M8GN - 2Gb DDR3 SDRAM G-Die

Download the NT5CB256M8GN datasheet PDF. This datasheet also covers the NT5CB512M4GN variant, as both devices belong to the same 2gb ddr3 sdram g-die family and are provided as variant models within a single manufacturer datasheet.

General Description

The 2Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 2,147,483,648 bits.

It is internally configured as an octal-bank DRAM.

The 2Gb chip is organized as 64Mbit x 4 I/O x 8 bank and 32Mbit x 8 I/O x 8 banks .

Key Features

  • and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and  falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V and 1.35V -0.0675V/+0.1V power supply and are available in BGA packages. 2 REV 1.1 08/ 2011 2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NT5CB512M4GN-Nanya.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NT5CB256M8GN
Manufacturer Nanya
File Size 2.34 MB
Description 2Gb DDR3 SDRAM G-Die
Datasheet download datasheet NT5CB256M8GN Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2Gb DDR3 SDRAM G-Die NT5CB512M4GN / NT5CB256M8GN NT5CC512M4GN / NT5CC256M8GN Feature  VDD = VDDQ = 1.5V ± 0.075V(JEDEC Standard Power Supply)  VDD = VDDQ = 1.35V -0.0675V/+0.1V (Backward Compatible to VDD = VDDQ = 1.5V ±0.